PART |
Description |
Maker |
IHD06N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW20N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW30N100R |
Reverse Conducting IGBT with monolithic body diode
|
INFINEON[Infineon Technologies AG]
|
XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
IHW15N120E1 |
Reverse conducting IGBT with monolithic body Diode for soft-switching
|
Infineon Technologies A...
|
DGT304RE DGT304RE13 |
Reverse Blocking Gate Turn-off Thyristor 390 A, 1300 V, REVERSE CONDUCTING GTO SCR
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|
IKW40N65WR5-16 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
5SHX06F6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
IXRH40N120 |
IGBT with Reverse Blocking capability
|
IXYS Corporation
|
HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES HSMS-2802 · Low reverse leakage Schottky diode HSMS-2803 · Low reverse leakage Schottky diode HSMS-2804 · Low reverse leakage Schottky diode HSMS-2805 · Low reverse leakage Schottky diode HSMS-2808 · Low reverse leakage Schottky diode HSMS-280B · Low reverse leakage Schottky diode HSMS-280C · Low reverse leakage Schottky diode HSMS-280E · Low reverse leakage Schottky diode HSMS-280F · Low reverse leakage Schottky diode HSMS-280K · Low reverse leakage Schottky diode HSMS-280L · Low reverse leakage Schottky diode HSMS-280M · Low reverse leakage Schottky diode HSMS-280N · Low reverse leakage Schottky diode HSMS-280R · Low reverse leakage Schottky diode
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http:// Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
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